AlBi is an intermetallic semiconductor compound composed of aluminum and bismuth, belonging to the III-V semiconductor family. This material is primarily of research and development interest rather than a mature commercial material, investigated for potential optoelectronic and thermoelectric applications where the bismuth component may impart unique electronic and thermal transport properties. AlBi represents an emerging area of compound semiconductor research, with engineering relevance in advanced device concepts that exploit the specific band structure and carrier mobility characteristics of aluminum-bismuth systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,714.5 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 3,280.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2113 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4000 | eV | — | ||
| ↳ | 0.04400 range 0.000–0.08800median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -110.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00410 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.00406 | eV/atom | — |