AlBaN3 is an aluminum barium nitride compound combining aluminum and barium with nitrogen. This material belongs to the ternary nitride family and appears to be a research-phase composition; such mixed-metal nitrides are investigated for their potential in wide-bandgap semiconductor applications, refractory properties, and high-temperature structural performance. Interest in this material class stems from the possibility of tuning electronic and thermal properties beyond binary nitride systems, with potential relevance to power electronics, thermal management in extreme environments, and advanced ceramic applications where conventional materials reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 2.693 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 3.580 | eV/atom | — |