AlAs5 is an aluminum-arsenic intermetallic compound belonging to the III-V semiconductor material family. This material is primarily of research and specialized optoelectronic interest rather than mainstream structural use, with applications in compound semiconductor devices where its unique electronic and optical properties are leveraged. Its selection is driven by specific performance requirements in photonic and electronic applications where conventional aluminum alloys or pure semiconductors are insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.875 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1697 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.02480 | eV/atom | — |