AlAgTe2 — Properties & Data | MatWorld

AlAgTe2

Name: AlAgTe2
Brand: MatWorld

semiconductor

· AlAgTe2

AlAgTe2 is a ternary semiconductor compound combining aluminum, silver, and tellurium in a layered crystalline structure. This material belongs to the family of chalcogenide semiconductors and is primarily of research interest for optoelectronic and thermoelectric applications, where its combination of moderate mechanical stiffness and semiconducting properties could enable advanced device designs. While not yet widely commercialized, materials in this compositional family are being investigated for next-generation photovoltaics, infrared detectors, and solid-state thermoelectric generators where the interaction between electrical transport and thermal properties becomes critical.

thermoelectric energy conversioninfrared detectorsexperimental semiconductorsoptoelectronic devicesresearch photovoltaics

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	42.36	GPa	DFT
↳	45.49	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3400	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	16.70	GPa	DFT
↳	17.05	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Density(ρ)	5.211	kg/m³	DFT · OptB88vdW

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Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.800	eV	Measured
↳	1.074	eV	DFT · OptB88vdW
↳	1.994	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	11.18	-	DFT · OptB88vdW
↳	10.95	-	DFT · PBE
↳	10.17 range 9.313–11.02median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.210	-	DFT · OptB88vdW
↳	6.930	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.1300	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.8400	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.5815	C/m²	DFT · OptB88vdW
↳	0.02485	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000248	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00198	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-46.06	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	264	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	23.10	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.3620	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlAgTe2

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