AlAgTe2 is a ternary semiconductor compound combining aluminum, silver, and tellurium in a layered crystalline structure. This material belongs to the family of chalcogenide semiconductors and is primarily of research interest for optoelectronic and thermoelectric applications, where its combination of moderate mechanical stiffness and semiconducting properties could enable advanced device designs. While not yet widely commercialized, materials in this compositional family are being investigated for next-generation photovoltaics, infrared detectors, and solid-state thermoelectric generators where the interaction between electrical transport and thermal properties becomes critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 42.36 | GPa | — | ||
| ↳ | 45.49 | GPa | — | ||
Poisson's Ratio(ν) | 0.3400 | - | — | ||
Shear Modulus(G)2 entries | 16.70 | GPa | — | ||
| ↳ | 17.05 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.211 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.800 | eV | — | ||
| ↳ | 1.074 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 10.95 | - | — | ||
| ↳ | 11.18 | - | — | ||
| ↳ | 10.17 range 9.313–11.02median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.02485 | C/m² | — | ||
| ↳ | 0.5815 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -46.06 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3620 | eV/atom | — |