AlAgSe2 — Properties & Data | MatWorld

AlAgSe2

Name: AlAgSe2
Brand: MatWorld

semiconductor

· AlAgSe2

AlAgSe2 is a ternary semiconductor compound combining aluminum, silver, and selenium in a chalcopyrite-type crystal structure. This material is primarily of research and developmental interest, studied for optoelectronic and photovoltaic applications where its bandgap and optical properties offer potential advantages in light absorption and conversion. While not yet commercialized at scale, ternary selenide semiconductors like AlAgSe2 represent an emerging class being explored as alternatives to binary semiconductors in specialized photonic and solid-state devices.

photovoltaic researchoptoelectronic devicessemiconductor researchnon-linear opticsthin-film solar cellsexperimental compound development

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?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	7,525.2	ksi	DFT
↳	8,286	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3700	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	2,600.7	ksi	DFT
↳	2,494.6	ksi	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1762	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	2.550	eV	Measured
↳	1.219	eV	DFT · OptB88vdW
↳	2.359	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	9.828	-	DFT · OptB88vdW
↳	9.700	-	DFT · PBE
↳	8.614 range 7.541–9.688median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	7.253	-	DFT · OptB88vdW
↳	5.141	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.1467	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	1.147	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.6327	C/m²	DFT · OptB88vdW
↳	0.09555	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000289	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00206	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-49.01	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	358.4	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	15.37	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6495	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlAgSe2

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