AlAgS₂ is a ternary semiconductor compound combining aluminum, silver, and sulfur in a fixed stoichiometric ratio. This material belongs to the family of I–III–VI₂ semiconductors and remains largely in the research and development phase, with potential applications in optoelectronics and photovoltaic devices where its bandgap and optical properties could be exploited. While not yet widely commercialized, compounds in this material family are of interest for thin-film solar cells, light-emitting devices, and radiation detection due to their tunable electronic structure and the wide availability of constituent elements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 63.40 | GPa | — | ||
| ↳ | 68.33 | GPa | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G)2 entries | 21.09 | GPa | — | ||
| ↳ | 20.34 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.854 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.130 | eV | — | ||
| ↳ | 1.977 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 8.440 | - | — | ||
| ↳ | 8.392 | - | — | ||
| ↳ | 7.201 range 6.149–8.253median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.1353 | C/m² | — | ||
| ↳ | 0.5894 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -74.22 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8698 | eV/atom | — |