AlAgS2 — Properties & Data | MatWorld

AlAgS2

Name: AlAgS2
Brand: MatWorld

semiconductor

· AlAgS2

AlAgS₂ is a ternary semiconductor compound combining aluminum, silver, and sulfur in a fixed stoichiometric ratio. This material belongs to the family of I–III–VI₂ semiconductors and remains largely in the research and development phase, with potential applications in optoelectronics and photovoltaic devices where its bandgap and optical properties could be exploited. While not yet widely commercialized, compounds in this material family are of interest for thin-film solar cells, light-emitting devices, and radiation detection due to their tunable electronic structure and the wide availability of constituent elements.

research semiconductorsthin-film photovoltaicsoptoelectronic deviceslight-emitting applicationsradiation detectorsexperimental materials development

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	63.40	GPa	DFT
↳	68.33	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3700	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	21.09	GPa	DFT
↳	20.34	GPa	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Density(ρ)	3.854	kg/m³	DFT · OptB88vdW

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Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	3.130	eV	Measured
↳	1.977	eV	DFT · OptB88vdW
↳	3.143	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)3 entries	8.392	-	DFT · OptB88vdW
↳	8.440	-	DFT · PBE
↳	7.201 range 6.149–8.253median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	6.058	-	DFT · OptB88vdW
↳	4.900	-	DFT · TBmBJ
Electronic Dielectric Tensor(ε∞)	Matrix (redacted)	-	DFT · PBE
Total Dielectric Tensor(ε)	Matrix (redacted)	-	DFT · PBE
Electron Effective Mass(m*e)	0.2833	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.447	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)2 entries	0.5894	C/m²	DFT · OptB88vdW
↳	0.1353	C/m²	DFT · PBE
Piezoelectric Stress Tensor(eij)	Matrix (redacted)	C/m²	DFT · PBE
Thermoelectric Power Factor(PF)2 entries	0.000507	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00146	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-74.22	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	399.5	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	3.160	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.8698	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlAgS2

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