Al8Sb8 is an experimental III-V semiconductor compound composed of aluminum and antimony elements, representing a member of the III-V compound semiconductor family. This material is primarily of research interest for high-frequency and optoelectronic device development, as III-V semiconductors offer superior electron mobility and direct bandgap properties compared to silicon. While not yet established in mainstream industrial production, Al8Sb8 and related aluminum-antimony phases are investigated for potential applications in microwave electronics, photodetectors, and heterojunction devices where direct bandgap tunability and high-speed performance are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 48.93 | GPa | — | ||
Shear Modulus(G) | 31.88 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03680 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1370 | eV/atom | — |