Al4InAgSe8 is a quaternary semiconductor compound combining aluminum, indium, silver, and selenium elements. This is a research-phase material belonging to the family of complex chalcogenide semiconductors, studied primarily for optoelectronic and photovoltaic applications where engineered bandgaps and carrier transport properties are needed. The material's multi-element composition offers tunable electronic properties compared to simpler binary or ternary semiconductors, making it of interest in next-generation solar cells, infrared detectors, and solid-state light emission devices, though it remains largely in development rather than widespread industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.409 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6830 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7931 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data