Al4Tl4O12 is an experimental mixed-metal oxide semiconductor compound combining aluminum and thallium oxides in a crystalline structure. This material belongs to the family of complex oxide semiconductors under active research for potential optoelectronic and photonic applications, though industrial deployment remains limited due to thallium's toxicity concerns and the compound's nascent development stage. The material is notable as a research platform for understanding charge transport and optical properties in multi-cation oxide systems, with potential relevance to wide-bandgap semiconductor technology if processing and environmental challenges can be addressed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8361 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.996 | eV/atom | — |