Al₄Sn₄O₁₄ is a mixed-metal oxide semiconductor combining aluminum and tin in a single crystalline or polycrystalline phase. This compound belongs to the family of complex oxides and is primarily explored in research contexts for optoelectronic and photocatalytic applications, where the dual-metal oxide structure can offer tunable band gaps and enhanced charge separation compared to single-metal oxide alternatives like SnO₂ or Al₂O₃.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.320 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.922 | eV/atom | — |