Al₄S₈Zn₂ is a quaternary semiconductor compound combining aluminum, sulfur, and zinc elements, representing an emerging material in the chalcogenide semiconductor family. This composition belongs to the broader class of mixed-metal sulfides being investigated for optoelectronic and photovoltaic applications, where the multi-component structure may offer tunable bandgap and enhanced light absorption compared to binary sulfide semiconductors. As a research-stage material, Al₄S₈Zn₂ is notable for its potential in thin-film solar cells, photodetectors, and other solid-state devices where cost-effective, earth-abundant alternatives to traditional semiconductors are sought.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,831.1 | ksi | — | ||
Shear Modulus(G) | 7,359.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.166 | eV/atom | — |