Al4Ni2Tm2 is an intermetallic compound combining aluminum, nickel, and thulium—a rare earth element—that functions as a semiconductor material. This is a research-stage compound rather than an established commercial material; it represents exploration within the broader family of rare-earth intermetallics that show promise for high-temperature electronic and thermoelectric applications. The incorporation of thulium, a lanthanide with unique electronic properties, suggests potential for specialized semiconductor devices operating in extreme environments or for quantum/magnetic applications where rare-earth dopants offer distinct advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 98.33 | GPa | — | ||
Shear Modulus(G) | 59.78 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00670 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6800 | eV/atom | — |