Al₄Ga₄O₁₂ is a mixed oxide semiconductor compound combining aluminum and gallium oxides, belonging to the spinel or garnet family of ceramic semiconductors. This material is primarily of research interest for optoelectronic and photonic applications, where it offers potential advantages in UV-visible light emission, scintillation detection, and high-temperature electronic devices due to its wide bandgap and structural stability. It represents an exploratory composition within the aluminum-gallium oxide family, which is actively investigated as an alternative to traditional III-V semiconductors for specialized high-performance applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30,894.6 | ksi | — | ||
Shear Modulus(G) | 16,074.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.811 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.562 | eV/atom | — |