Al₄Ca₆As₈ is an intermetallic compound combining aluminum, calcium, and arsenic—a quaternary semiconductor material that exists primarily in research contexts rather than established commercial production. This compound belongs to the family of III-V and mixed-valence semiconductors, which are of interest for electronic and optoelectronic device development due to their tunable bandgap and potential for heterostructure applications. Limited industrial deployment exists; the material is primarily studied in materials science laboratories for fundamental semiconductor physics, thin-film growth, and exploratory device architectures where conventional binary semiconductors (GaAs, InP) may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.106 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9320 | eV/atom | — |