Al₃B₁N₄ is an advanced ceramic semiconductor compound combining aluminum, boron, and nitrogen in a single phase. This material belongs to the family of ternary nitride ceramics and remains primarily in research and development stages, where it is being investigated for its potential as a wide-bandgap semiconductor with exceptional hardness and thermal stability. Its appeal lies in potential applications requiring high-temperature operation, extreme mechanical durability, and electrical performance in harsh environments where conventional semiconductors degrade.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32,894.6 | ksi | — | ||
Shear Modulus(G) | 23,008.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.598 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.338 | eV/atom | — |