Al₂ZnSe₄ is a quaternary semiconductor compound combining aluminum, zinc, and selenium elements, belonging to the family of II-VI and I-III-VI₂ semiconductors. This material is primarily of research and developmental interest rather than a mature commercial product, with potential applications in optoelectronic devices and solid-state physics where its semiconductor bandgap properties could be exploited. The material is notable within the context of wide-bandgap semiconductor research, where variations in composition allow tuning of electronic and optical properties for specialized photonic and thermal management applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 38.10 | GPa | — | ||
| ↳ | 43.49 | GPa | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G)2 entries | 24.32 | GPa | — | ||
| ↳ | 28.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.233 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.293 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 9.180 | - | — | ||
| ↳ | 9.286 | - | — | ||
| ↳ | 7.908 range 6.613–9.202median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.04290 | C/m² | — | ||
| ↳ | 0.5157 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -71.01 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8992 | eV/atom | — |