Al2ZnSe2S2 is a quaternary semiconductor compound combining aluminum, zinc, selenium, and sulfur elements, belonging to the family of mixed-anion semiconductors. This is primarily a research material investigated for optoelectronic and photovoltaic applications, where the tunable bandgap and mixed chalcogenide composition offer potential advantages over binary semiconductors for tailoring optical and electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1260 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.814 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.05150 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9809 | eV/atom | — |