Al2Te3 is a III–VI semiconductor compound composed of aluminum and tellurium, belonging to the family of metal tellurides studied for optoelectronic and thermoelectric applications. This material is primarily of research interest rather than established commercial production, with potential relevance in next-generation semiconductor devices, infrared detectors, and energy conversion systems where the wide bandgap and layered crystal structure can be exploited. Engineers may consider Al2Te3 in exploratory projects requiring narrow-gap semiconductors or two-dimensional material derivatives, though material availability, synthesis reproducibility, and device integration remain active research challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,064 | ksi | — | ||
Exfoliation Energy(Eexf) | 81.67 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 2,571.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1610 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.200 | eV | — | ||
| ↳ | 1.456 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 11.05 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -325.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00120 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.6608 | eV/atom | — | ||
| ↳ | -0.4857 | eV/atom | — |