Al₂Se₃ is a III-VI compound semiconductor formed from aluminum and selenium, belonging to the family of binary metal chalcogenides. While primarily of research and developmental interest rather than a production material, it is investigated for optoelectronic and photovoltaic applications where wide bandgap semiconductors are needed. Engineers and researchers consider this material for specialized roles in UV photodetectors, thin-film solar cells, and high-temperature electronic devices where its wide direct bandgap and thermal stability offer potential advantages over conventional silicon-based systems, though commercial maturity and scalable synthesis remain ongoing challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 35.27 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 22.68 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.819 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.100 | eV | — | ||
| ↳ | 1.945 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 9.350 | - | — | ||
| ↳ | 11.16 | - | — | ||
| ↳ | 8.095 range 6.327–9.863median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.4986 | C/m² | — | ||
Seebeck Coefficient(S) | -111.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -1.175 | eV/atom | — | ||
| ↳ | -0.9262 | eV/atom | — |