Al2InN3 is an advanced ternary nitride ceramic compound combining aluminum, indium, and nitrogen—part of the III-nitride material family that also includes GaN and AlN. This material is primarily of research and development interest for high-temperature semiconductor and optoelectronic applications, where its intermediate properties between binary nitrides offer potential advantages in wide-bandgap device engineering and thermal management. Engineers evaluating Al2InN3 would consider it for next-generation applications requiring thermal stability, chemical inertness, and electrical performance beyond conventional binary nitrides, though availability and processing maturity remain limited compared to established III-nitride alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25,166.9 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 14,247.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1734 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.407 | eV | DFT · OptB88vdW | ||
| ↳ | 3.511 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 5.498 | - | DFT · OptB88vdW | ||
| ↳ | 4.200 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 1.240 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01330 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.090 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data