Al2InN3

metal
· JVASP-133533· Al2InN3

Al2InN3 is an advanced ternary nitride ceramic compound combining aluminum, indium, and nitrogen—part of the III-nitride material family that also includes GaN and AlN. This material is primarily of research and development interest for high-temperature semiconductor and optoelectronic applications, where its intermediate properties between binary nitrides offer potential advantages in wide-bandgap device engineering and thermal management. Engineers evaluating Al2InN3 would consider it for next-generation applications requiring thermal stability, chemical inertness, and electrical performance beyond conventional binary nitrides, though availability and processing maturity remain limited compared to established III-nitride alternatives.

wide-bandgap semiconductorshigh-temperature electronicsoptoelectronic devicesthermal management substratesresearch-phase materialsadvanced ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
173.5
GPa—
Poisson's Ratio(ν)
0.2600
-—
Shear Modulus(G)
98.23
GPa—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
4.801
kg/m³—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
2.407
eV—
Magnetic Moment(μB)
0.000
µB—
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
0.01330
eV/atom—
Formation Energy(ΔHf)
-1.090
eV/atom—
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.