Al2InN3 is an advanced ternary nitride ceramic compound combining aluminum, indium, and nitrogen—part of the III-nitride material family that also includes GaN and AlN. This material is primarily of research and development interest for high-temperature semiconductor and optoelectronic applications, where its intermediate properties between binary nitrides offer potential advantages in wide-bandgap device engineering and thermal management. Engineers evaluating Al2InN3 would consider it for next-generation applications requiring thermal stability, chemical inertness, and electrical performance beyond conventional binary nitrides, though availability and processing maturity remain limited compared to established III-nitride alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 173.5 | GPa | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 98.23 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.801 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.407 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01330 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.090 | eV/atom | — |