Al2InGe2 is an intermetallic compound composed of aluminum, indium, and germanium, belonging to the family of III-V and III-IV semiconductor intermetallics. This is a research-phase material studied primarily for its potential in advanced electronic and photonic applications, where the combination of these elements may offer tunable bandgap properties or unique lattice characteristics compared to binary semiconductors. The compound's relevance stems from ongoing investigation into ternary semiconductor systems for next-generation optoelectronic devices and high-temperature electronic components.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,654.4 | ksi | — | ||
Shear Modulus(G) | -1,032.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1742 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.04837 | eV/atom | — |