Al₂CdSe₄ is a quaternary semiconductor compound belonging to the II-IV-VI₂ family of materials, combining aluminum, cadmium, and selenium in a fixed stoichiometric ratio. This material is primarily of research and developmental interest rather than an established industrial commodity, with potential applications in optoelectronics and photovoltaic research where its semiconductor band gap and optical properties may offer advantages in niche high-performance systems. Engineers would consider Al₂CdSe₄ for experimental photovoltaic absorber layers, solid-state radiation detectors, or specialized infrared optical devices where the unique combination of constituent elements can be engineered for specific wavelength response, though material availability, processing maturity, and cost typically limit current adoption to laboratory and prototype development rather than volume manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 33.01 | GPa | — | ||
| ↳ | 38.08 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G)2 entries | 19.11 | GPa | — | ||
| ↳ | 22.25 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.379 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.094 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 9.310 | - | — | ||
| ↳ | 9.382 | - | — | ||
| ↳ | 7.862 range 6.486–9.238median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.08680 | C/m² | — | ||
| ↳ | 0.5082 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -66.21 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8677 | eV/atom | — |