Al2CdS4
metalAl2CdS4 is a quaternary compound semiconductor combining aluminum, cadmium, and sulfur—a member of the I-III-VI2 ternary semiconductor family. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and semiconducting properties make it a candidate for photodetectors, thin-film solar cells, and light-emitting devices, though industrial adoption remains limited compared to more mature semiconductor systems like CdTe or CIGS. Engineers would consider Al2CdS4 when developing next-generation photovoltaic absorbers or UV-sensitive detectors where the combination of aluminum, cadmium, and sulfur offers tunable electronic properties, though material availability, processing complexity, and cadmium toxicity concerns typically drive selection toward alternative II-VI or I-III-VI compounds in production environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 38.69 | GPa | — | ||
| ↳ | 43.16 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G)2 entries | 21.64 | GPa | — | ||
| ↳ | 24.93 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.075 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.864 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 8.230 | - | — | ||
| ↳ | 8.271 | - | — | ||
| ↳ | 6.710 range 5.280–8.139median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.1321 | C/m² | — | ||
| ↳ | 0.5091 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -83.94 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.106 | eV/atom | — |