Al2BiSe4 is a ternary compound semiconductor combining aluminum, bismuth, and selenium elements, belonging to the family of mixed-metal chalcogenides. This material is primarily of research and developmental interest rather than established industrial production, investigated for potential optoelectronic and thermoelectric applications where its layered crystal structure and narrow bandgap may offer advantages in specialized device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.975 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.325 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -332.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7924 | eV/atom | — |