Al2 Zn1 Te4
semiconductorAl₂Zn₁Te₄ is a ternary semiconductor compound belonging to the II-VI and I-III-VI₂ material families, combining aluminum, zinc, and tellurium in a defined stoichiometric ratio. This material is primarily of research and developmental interest rather than established in high-volume production, being studied for potential optoelectronic and photovoltaic applications where its bandgap and crystal structure could offer advantages over binary semiconductors. Engineers considering this compound would be working in advanced materials development for next-generation photovoltaic devices, IR detectors, or specialized optoelectronic applications where the ternary composition provides tunable electronic properties compared to conventional II-VI alternatives like CdTe or ZnTe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |