Al₂Tl₄F₁₀ is a mixed-metal fluoride compound combining aluminum and thallium in an anionic fluoride framework, belonging to the class of complex fluoride semiconductors. This is a research-phase material studied for its electronic and optical properties within the broader family of halide semiconductors; industrial applications remain limited pending further characterization and potential scalability assessments. The material's electronic behavior and thallium incorporation distinguish it from simpler fluoride systems, making it of interest for specialized optoelectronic or solid-state device research rather than high-volume manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.937 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.839 | eV/atom | — |