Al₂Si₂Te₆ is a quaternary semiconductor compound combining aluminum, silicon, and tellurium elements. This material belongs to the family of mixed-valence semiconductors and represents an emerging research compound rather than a commercially established material; such compositions are typically investigated for potential optoelectronic and thermoelectric applications where the combination of elements offers tunable band gaps and carrier transport properties distinct from binary or ternary semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,855.6 | ksi | — | ||
Shear Modulus(G) | 3,032.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.192 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2720 | eV/atom | — |