Al₂Sb₂ is a III-V semiconductor compound composed of aluminum and antimony, belonging to the family of binary intermetallic semiconductors. This material is primarily of research and developmental interest for optoelectronic and high-frequency electronic applications, particularly in scenarios where direct bandgap semiconductors are needed for light emission or detection in the infrared region. Compared to more established III-V compounds like GaAs or InSb, Al₂Sb₂ offers distinct lattice properties and thermal characteristics that make it attractive for specialized integrated circuit designs, though it remains less commercially deployed than mainstream alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 45.53 | GPa | — | ||
Shear Modulus(G) | 24.54 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.02600 | eV/atom | — |