Al2Sb2I12 is an experimental halide perovskite semiconductor compound combining aluminum, antimony, and iodine. This material belongs to the emerging class of layered halide perovskites, which are being investigated as alternatives to lead-based perovskites for optoelectronic applications due to their potential for lower toxicity and tunable electronic properties. While primarily in research stages, materials in this family show promise for photovoltaic devices, light-emitting applications, and radiation detection where band gap engineering and stability improvements over conventional perovskites are sought.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,405.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 848.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.910 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5020 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data