Al2 P2

semiconductor

· Al2 P2

Aluminum phosphide (AlP) is a III-V semiconductor compound with a direct bandgap, belonging to the family of binary semiconductors used in optoelectronic and high-frequency applications. While less common than GaAs or GaN, AlP is primarily explored in research contexts for UV light emission, high-temperature electronics, and as a substrate or buffer layer in heterostructure devices due to its wide bandgap and thermal stability. Engineers select AlP-based materials when seeking alternatives to gallium arsenide in applications demanding higher operating temperatures, improved UV response, or lattice-matched integration with other III-V compounds, though commercial adoption remains limited compared to more established semiconductors.

UV optoelectronics and light-emitting devicesHigh-temperature semiconductorsHeterostructure substrates and buffer layersHigh-frequency microwave electronicsResearch and development applicationsWide-bandgap semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	12,076.9	ksi	—
Shear Modulus(G)	6,825.5	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.050	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7450	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al2 P2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control