Al₂P₂S₈ is a phosphide-sulfide semiconductor compound combining aluminum with phosphorus and sulfur elements, representing an emerging material in the chalcogenide semiconductor family. This composition belongs to the broader category of mixed-anion semiconductors being investigated for optoelectronic and photonic device applications, where the combination of P and S ligands enables tunable band gap properties. While primarily at the research and development stage, materials in this family are of interest for next-generation photovoltaic devices, light-emitting applications, and photodetectors where conventional binary semiconductors reach fundamental limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19.51 | GPa | — | ||
Shear Modulus(G) | 11.13 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.480 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6210 | eV/atom | — |