Aluminum nitride (AlN) is a ceramic semiconductor compound belonging to the III-V nitride family, valued for its combination of wide bandgap properties and excellent thermal conductivity. It is primarily used in high-power electronics, RF (radio frequency) devices, and thermal management applications where heat dissipation and electrical insulation are critical, as well as in optoelectronics for UV-emitting devices. AlN's appeal over competing wide-bandgap semiconductors lies in its superior thermal performance and relative cost-effectiveness for certain applications, though it faces competition from GaN (gallium nitride) in some power electronics markets.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 31,018.8 | ksi | — | ||
Shear Modulus(G) | 19,690.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.688 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.523 | eV/atom | — |