Al2 In2 O6

semiconductor

· Al2 In2 O6

Al₂In₂O₆ is an indium-aluminum oxide semiconductor compound belonging to the mixed-metal oxide family, related to transparent conducting oxides (TCOs) and wide-bandgap semiconductor materials. This is primarily a research material investigated for optoelectronic and photocatalytic applications where the combination of indium and aluminum oxides offers tunable electrical and optical properties. Engineers consider this composition for next-generation transparent electronics, photocatalysts for environmental remediation, and potential thin-film device applications where the structural rigidity and semiconducting behavior of the material system provide advantages over single-component oxides or conventional alternatives.

transparent thin-film electronicsphotocatalytic devicesoptoelectronic researchwide-bandgap semiconductorsmixed-metal oxide coatingsadvanced materials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	27,774.7	ksi	—
Shear Modulus(G)	13,511.7	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.464	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.488	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al2 In2 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control