Al2Ge2Y2 is a ternary intermetallic compound combining aluminum, germanium, and yttrium—a rare-earth-doped semiconductor system primarily of research interest rather than established commercial production. This material family is investigated for potential applications in advanced optoelectronics and high-temperature semiconductor devices, leveraging yttrium's role in modifying electronic structure and thermal stability; however, it remains largely experimental with limited industrial deployment compared to conventional III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,609.4 | ksi | — | ||
Shear Modulus(G) | 8,134.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00700 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6990 | eV/atom | — |