Al2 F1 K4 Nb11 O20

semiconductor

· Al2 F1 K4 Nb11 O20

Al2F1K4Nb11O20 is a mixed-metal oxide fluoride compound containing aluminum, potassium, and niobium—a material class of interest primarily in materials research rather than established industrial production. This composition likely represents a layered or framework structure with potential semiconductor or ionic conductor properties, positioning it within the broader family of complex metal oxides and fluorides under investigation for advanced functional applications. Such materials are typically explored for their electronic properties, ion transport capabilities, or catalytic potential in specialized electrochemical and photochemical systems.

experimental semiconductor researchionic conductor developmentcatalytic material systemsadvanced ceramicselectronic material physicselectrochemical energy storage

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02220	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.596	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al2 F1 K4 Nb11 O20

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control