Al₂As₂ is a III-V semiconductor compound composed of aluminum and arsenic elements, belonging to the family of aluminum arsenides used in optoelectronic and high-frequency device research. This material is primarily investigated in laboratory and developmental contexts for potential applications in integrated photonics, high-electron-mobility transistors (HEMTs), and wide-bandgap semiconductor devices where its electronic properties may offer advantages over more common III-V compounds. Engineers consider Al₂As₂ when designing next-generation RF circuits, quantum devices, or heterostructure systems that require specific band-alignment characteristics unavailable in conventional GaAs or AlGaAs platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,985 | ksi | — | ||
Shear Modulus(G) | 5,834.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.808 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5690 | eV/atom | — |