Al₁₂Te₁₂I₄ is a mixed-halide aluminum telluride semiconductor compound combining aluminum, tellurium, and iodine elements. This is a research-phase material rather than an established commercial product, belonging to the family of halide perovskite and post-perovskite semiconductors being investigated for optoelectronic and photovoltaic applications. The incorporation of tellurium and iodine into an aluminum framework represents an emerging approach to developing stable, tunable bandgap semiconductors for next-generation solar cells, photodetectors, and light-emitting devices, with potential advantages in thermal stability and defect tolerance compared to conventional lead-halide perovskites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.956 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5320 | eV/atom | — |