Al₁Si₂Er₂ is an intermetallic compound combining aluminum, silicon, and erbium—a rare-earth element—that functions as a semiconductor material. This composition represents an experimental or specialized research compound rather than a widely commercialized engineering material; such rare-earth-doped aluminum silicides are investigated for potential applications in high-temperature electronics, photonics, and thermal management where conventional semiconductors reach performance limits. The erbium dopant can introduce luminescent or magnetic properties useful in optoelectronic devices, though practical deployment remains limited to specialized research and development contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,329 | ksi | — | ||
Shear Modulus(G) | 8,766.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01300 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6950 | eV/atom | — |