Aluminum antimonide (AlSb) is a III-V compound semiconductor formed from aluminum and antimony elements. It is primarily used in high-frequency optoelectronic and microelectronic applications where its direct bandgap and electron mobility properties enable fast signal processing and light emission/detection in the infrared spectrum.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,314.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,354 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.322 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2430 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data