Al₁Sb₁O₃ is a ternary oxide semiconductor compound combining aluminum, antimony, and oxygen in a 1:1:3 stoichiometry. This material remains primarily in the research and development phase, studied as part of the broader family of III-V oxide semiconductors for potential optoelectronic and photovoltaic applications where conventional III-V compounds (like GaAs) may be less suitable. The antimony-aluminum-oxide system is of interest for exploring novel band structures and carrier transport mechanisms in oxide-based device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.016 | eV/atom | — |