Aluminum antimonide (AlSb) is a III-V compound semiconductor formed from aluminum and antimony elements. It is primarily used in high-frequency optoelectronic and microelectronic applications where its direct bandgap and electron mobility properties enable fast signal processing and light emission/detection in the infrared spectrum.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 50.43 | GPa | — | ||
Shear Modulus(G) | 30.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.322 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2430 | eV/atom | — |