Al₁Os₁ is an intermetallic compound combining aluminum with osmium, belonging to the semiconductor class of materials. This is a research-phase compound rather than a commercially established material; intermetallic semiconductors of this type are investigated for potential applications requiring high thermal stability and electrical property control at elevated temperatures. The aluminum-osmium system represents an exploratory composition within materials research focused on refractory intermetallics with semiconducting behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33,895.3 | ksi | — | ||
Shear Modulus(G) | 17,387.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4260 | eV/atom | — |