Al1 Ga1 N2

semiconductor

· Al1 Ga1 N2

AlGaN (aluminum gallium nitride) is a III-V compound semiconductor alloy that combines aluminum nitride and gallium nitride in a 1:1:2 stoichiometric ratio. This material is a wide-bandgap semiconductor widely used in high-power and high-frequency optoelectronic and electronic devices, where its superior thermal stability, electrical conductivity, and UV/blue light emission capabilities exceed those of conventional silicon. AlGaN is the critical active layer in ultraviolet LEDs, power amplifiers for RF/microwave applications, and high-electron-mobility transistors (HEMTs) for demanding aerospace and defense systems.

ultraviolet LEDsRF power amplifiershigh-electron-mobility transistors (HEMTs)high-temperature electronicsaerospace RF systemswater purification (UV sterilization)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	27,399.2	ksi	—
Shear Modulus(G)	18,040.8	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.946	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.098	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al1 Ga1 N2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control