Al₁Bi₃O₉ is a ternary oxide semiconductor compound combining aluminum and bismuth in a crystalline structure. This material belongs to the bismuth oxide family of semiconductors, which are of interest in photocatalysis, optoelectronics, and solid-state device research, though Al₁Bi₃O₉ itself remains primarily a research-phase compound rather than a mature industrial material. The bismuth oxide family is valued for visible-light activity and band-gap tunability, making it a candidate for next-generation photocatalytic and sensing applications where conventional wide-band-gap semiconductors prove inefficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00500 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9280 | eV/atom | — |