Al₁Bi₁O₃ is a bismuth-aluminum oxide semiconductor compound that combines metallic bismuth with aluminum oxide in a 1:1:3 stoichiometry. This is an experimental or niche research material rather than an established commercial compound; it belongs to the broader family of mixed-metal oxides being investigated for optoelectronic and photocatalytic applications. Engineers considering this material should recognize it as primarily of research interest, potentially useful in visible-light photocatalysis, thin-film semiconductors, or specialized optoelectronic devices where bismuth's narrow bandgap and aluminum oxide's chemical stability can be leveraged together.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 198.9 | GPa | — | ||
Shear Modulus(G) | 126.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.059 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.270 | eV/atom | — |