Al₁B₃N₄ is an advanced ceramic semiconductor compound combining aluminum, boron, and nitrogen—a material family known for exceptional hardness and thermal stability. While not yet widely commercialized as a bulk engineering material, compounds in this ternary system are of strong research interest for high-temperature and high-power electronic applications, offering potential advantages over traditional semiconductors in extreme environments where thermal and chemical resistance are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 44,777.9 | ksi | — | ||
Shear Modulus(G) | 35,708.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.889 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.112 | eV/atom | — |