Al₁Ag₁O₃ is an experimental mixed-metal oxide semiconductor combining aluminum and silver oxides in a 1:1:3 stoichiometric ratio. This compound belongs to the family of ternary oxides and has been explored in research contexts for optoelectronic and photocatalytic applications, where the combination of aluminum and silver oxide phases may offer enhanced charge carrier dynamics or catalytic activity compared to single-phase alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00440 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.06900 | eV/atom | — |