Al0.99Ga0.01P1

semiconductor

· Al0.99Ga0.01P1

Al₀.₉₉Ga₀.₀₁P₁ is a III-V semiconductor alloy composed primarily of aluminum phosphide with a small gallium substitution on the cation sublattice, creating a direct bandgap material with wide bandgap characteristics. This material is used in specialized optoelectronic and high-temperature electronic applications where its wide bandgap enables operation in harsh environments, UV detection, and high-power devices; it represents a research-oriented composition within the AlGaP alloy family, offering potential advantages over pure AlP in lattice matching and carrier transport for advanced semiconductor devices.

UV photodetectorsHigh-temperature electronicsWide bandgap semiconductorsOptoelectronic devicesResearch compound

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.490	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.99Ga0.01P1

Electrical Properties

Regulatory Screening

Environmental

Export Control